Carrier pocket engineering applied to "strained" Si/Ge superlattices to design useful thermoelectric materials
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Quantum modeling of thermoelectric performance of strained Si/Ge/Si superlattices using the nonequilibrium Green’s function method
The cross-plane thermoelectric performance of strained Si/Ge/Si superlattices is studied from a quantum point of view using the nonequilibrium Green’s function method. Strain causes the germanium well layers to turn into barriers that promote electron tunneling through the barriers. Electron tunneling produces oscillations in the Seebeck coefficient due to shift in subband energies near the Fer...
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